The highlights here document the progress and impact of scientific research within the Center for Next Generation of Materials by Design. Most of these highlights are associated with published journal articles by our principal investigators.
ALD Oxides for Higher Performance Power Transistors (February 2017)
Successfully grew single-crystalline (Mg,Ca)O films epitaxially on InAlN transistors with unprecedentedly low density of defects and electron traps at the oxide/semiconductor interface.
Successfully determined the synthesis space (substrate temperature, oxygen partial pressure, substrate selection) for the targeted growth of β-Ga2O3 thin films through theory-guided experiments. Grew high-quality, oriented β-Ga2O3 films.
Revealed the thermodynamic landscape of inorganic crystalline metastability. Proposed principle of Remnant Metastability: "Observable metastable phases are remnants of thermodynamic conditions where they were once the lowest free-energy phase."
Characterized the interfacial electronic band alignment using new high-throughput measurements by coupling spatially resolved photoelectron spectroscopy (PES) mapping with combinatorially deposited crossed-gradient thin-film samples.
Local Amorphous Structure Controls Polymorph Formation (October 2016)
Used grazing incidence X-ray scattering measurements to identify local structural differences in amorphous thin-film precursors that subsequently determine the polymorph formed upon crystallization.
Epitaxial Polymorph Stabilization through a Computational Approach to Substrate Selection (May 2016)
Developed a computational framework combining calculations of formation energy, elastic strain energy, and topological lattice matching to guide substrate selection for epitaxial materials growth.
We provide a new perspective on the promising properties, unexplored chemistry, and metastable character of nitride semiconductors for solar energy conversion.
Through a collaboration with the Center for Computational Design of Functional Layered Materials EFRC, we have established that the new, non-empirical, SCAN (Strongly Constrained and Appropriately Normed Semilocal Density Functional) exchange-correlation functional for density functional theory provides a uniquely accurate first-principles model of polymorph energetics and properties.
Bismuth Triiodide (BiI3) – A Candidate Photovoltaic Absorber (December 2015)
We identified BiI3 as a candidate photovoltaic absorber using computational design criteria based on the methyl ammonium lead iodide perovskites. Initial experiments demonstrate room-temperature photoluminescence with application-relevant lifetimes.
Transition Metal Oxide Semiconductors (Sept 2015)
Comprehensive assessment of semiconducting transition metal oxides using unbiased electronic structure calculations with integrated treatment of s, p, and d electrons.
We developed a theoretical approach to search for new and realizable metastable polymorphs in ionic systems.
The key role that band-edge orbital character has on defect tolerance (gained from MAPbX3 perovskites) underlies a new joint data-mining and theory approach to screen materials for long minority-carrier lifetimes, which is a critical photovoltaic absorber property.
Thin films of the metastable spinel γ-Sn3N4 were synthesized by sputtering and characterized for semiconducting properties, such as absorption spectra, electrical transport, ionization potential, and minority-carrier diffusion length.
The mission of the Center for Next Generation of Materials by Design is to dramatically transform the discovery of functional energy materials through multiple-property search, incorporation of metastable materials into predictive design, and the development of theory to guide materials synthesis.
The Center for Next Generation of Materials by Design is creating a high-throughput computational tool based on first-principles theory to predict the formation energy of polymorphs, including new unknown structures.
The Center for Next Generation of Materials by Design is designing a novel semiconducting transition metal oxide alloy with absorption in the visible and with favorable electron and hole transport properties.